Visible-blind GaN p-i-n photodiodes with an Al0.12Ga0.88N/GaN superlattice structure

Solid-State Electronics

Volumn 47, Issue 5, 2003, Pages 873-878

  Yeh, L S ^a   Lee, M L ^b   Sheu, J K ^a   Chen, M G ^a   Kao, C J ^a   Chi, G C ^a   Chang, S J ^b   Su, Y K ^b  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

AlGaN GaN superlattice responsivity; p i n; Ultraviolet detector

Indexed keywords

CARRIER CONCENTRATION; GALLIUM NITRIDE; PHOTOCURRENTS; SEMICONDUCTOR SUPERLATTICES; STRAIN; ULTRAVIOLET DETECTORS; VAPOR PHASE EPITAXY;

TRANSIENT RESPONSE;

PHOTODIODES;

EID: 0037406951     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00441-0     Document Type: Article

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