Characteristics and Applications of a 0.6 pm Bipolar-CMOS-DMOSTechnology combining VLSI Non-Volatile Memories

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1996, Pages 465-468

  Contiero, Claudio ^a   Galbiati, Paola ^a   Palmieri, Michele ^a   Vecchi, Lodovica ^a  

^a STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; GATES (TRANSISTOR); ION IMPLANTATION; MOS DEVICES; NITROGEN; NONVOLATILE STORAGE; OXIDES; PHOSPHORUS; POWER ELECTRONICS; PROM; THICK FILMS; VLSI CIRCUITS;

ANALOG FUNCTIONS; BCD PROCESS; DIGITAL FUNCTIONS; ONE CHIP; PERFORMANCE; POWER FUNCTIONS; POWER PROCESS; SMART POWER;

VLSI CIRCUITS; INTEGRATED CIRCUIT MANUFACTURE;

BIPOLAR CMOS DMOS TECHNOLOGY; FLASH NONVOLATILE MEMORIES; ISOLATION; SMART POWER PROCESS;

EID: 0030413562     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1996.553627     Document Type: Conference Paper

References (6)

1. [ l ]A.Andreini, C.Contiero and P.Galbiati, ZEEETransactions on Electron Devices, vol. ED-33
2. B. Murari and D. Rossi, 1st Workshop on Microcontroller Developments andApplications, Stockholm, 16/17 October 1995
3. J. P. BiersackandL. G .Haggmark, Nucl. Instrum.Meth. 174,257,1980
4. U.S.Patent 5,132,239 by P. Ghezzi, C. Riva and M. G. Valentini
5. C. Contiero, P. Galbiati, M. Palmieri, L. Vecchi, ZSPSD Proceedings, p.75, 1996
6. M. Lanzoni, G. Tondi, P. Galbiati, B. Ricco', ESSDERC Proceedings, p. 135,1996