HOT CARRIER DEGRADATION MODES AND OPTIMIZATION OF LDD MOSFETS.

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1984, Pages 774-777

  Katto, H ^a   Okuyama, K ^a   Meguro, S ^a   Nagai, R ^a   Ikeda, S ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

TRANSISTORS, FIELD EFFECT;

HOT CARRIERS; LIGHTLY DOPED DRAIN (LDD);

SEMICONDUCTOR DEVICES, MOSFET;

HOT CARRIERS; LIGHTLY DOPED DRAIN (LDD);

EID: 0021640334     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/iedm.1984.190841     Document Type: Conference Paper

References (8)