A New Substrate and Gate Current Phenomenon in Short-Channel LDD and Minimum Overlap Devices

IEEE Electron Device Letters

Volumn 6, Issue 3, 1985, Pages 135-138

  Hui, J ^a   Hsu, F C ^a   Moll, J ^a  

^a HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DATA STORAGE, DIGITAL - FIXED; SEMICONDUCTOR DEVICES - MODELING; SEMICONDUCTOR MATERIALS;

(LDD); GATE CURRENT; LIGHTLY DOPED DRAIN; MINIMUM OVERLAP DEVICES; SHORT-CHANNEL LDD;

INTEGRATED CIRCUITS, VLSI;

EID: 0022026348     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/EDL.1985.26072     Document Type: Article

References (7)

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7. F. C. Hsu and K. Y. Chiu, “Evaluation of LDD MOSFET’s based on hot-electron-induced degradation,” IEEE Electron Device Lett., vol. EDL-5, pp. 162–165, May 1984.