ASYMMETRY OF THE SUBSTRATE CURRENT CHARACTERISTICS ENHANCED BY THE GATE BIRD'S BEAK.

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1986, Pages 67-68

  Hamamoto, T ^a   Oowaki, Y ^a   Hieda, K ^a   Ohuchi, K ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES, MOSFET; SEMICONDUCTOR MATERIALS - DOPING;

CURRENT CHARACTERISTICS; GATE BIRD'S BEAK; LDD MOSFET; LIGHTLY DOPED DRAIN STRUCTURE;

INTEGRATED CIRCUITS, VLSI;

EID: 0022880171     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)