메뉴 건너뛰기




Volumn 46, Issue 6, 1999, Pages 11461158-

A shortchannel DC spice model for polysilicon thinfilm transistors including temperature effects

Author keywords

IV model; Kink effect; PolySi TFT; Shortchannel effect; Temperature effects

Indexed keywords


EID: 33747180799     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (12)

References (37)
  • 2
    • 0028375172 scopus 로고    scopus 로고
    • Design and performance of digital polysilicon thinfilm transistor circuits on glass," in
    • 1994, vol. 141, p. 56.
    • S. Fluxman, Design and performance of digital polysilicon thinfilm transistor circuits on glass," in IEE Proc. Circuits Device Syst., 1994, vol. 141, p. 56.
    • IEE Proc. Circuits Device Syst.
    • Fluxman, S.1
  • 3
    • 33747184069 scopus 로고    scopus 로고
    • Lowtemp poly Si flat panels emerge,"
    • 1, Apr. 22, 1996.
    • D. Lammers, Lowtemp poly Si flat panels emerge," Electron. Eng. Times, p. 1, Apr. 22, 1996.
    • Electron. Eng. Times, P.
    • Lammers, D.1
  • 4
    • 33747156760 scopus 로고    scopus 로고
    • LCD's to invade CRT turf,"
    • 8, Apr. 22, 1996.
    • Y. Hara, LCD's to invade CRT turf," Electron. Eng. Times, p. 8, Apr. 22, 1996.
    • Electron. Eng. Times, P.
    • Hara, Y.1
  • 5
    • 33747204711 scopus 로고    scopus 로고
    • Japan pushes pSi LCD's,"
    • 22, July 11, 1994.
    • Japan pushes pSi LCD's," Electron. Eng. Times, p. 22, July 11, 1994.
    • Electron. Eng. Times, P.
  • 6
    • 33747200252 scopus 로고    scopus 로고
    • Polysilicon TFT LCD's aimed at HDTV,"
    • 26, July 11, 1994.
    • Polysilicon TFT LCD's aimed at HDTV," Electron. Eng. Times, p. 26, July 11, 1994.
    • Electron. Eng. Times, P.
  • 7
    • 33747190155 scopus 로고    scopus 로고
    • Status and prospects of polySi TFT technology," in
    • 1994, p. 26.
    • H. Oshima, Status and prospects of polySi TFT technology," in Proc. Int. Display Res. Conf., 1994, p. 26.
    • Proc. Int. Display Res. Conf.
    • Oshima, H.1
  • 8
    • 33747153447 scopus 로고    scopus 로고
    • Sony readies 5.6 in TFT LCD,"
    • 20, Jan. 22, 1996.
    • Sony readies 5.6 in TFT LCD," Electron. Eng. Times, p. 20, Jan. 22, 1996.
    • Electron. Eng. Times, P.
  • 9
    • 0025401960 scopus 로고    scopus 로고
    • A quasitwodimensional analytical model for the turnon characteristic of polysilicon thinfilm transistors,"
    • vol. 37, p. 666, 1990.
    • P. Lin, J. Guo, and C. Wu, A quasitwodimensional analytical model for the turnon characteristic of polysilicon thinfilm transistors," IEEE Trans. Electron Devices, vol. 37, p. 666, 1990.
    • IEEE Trans. Electron Devices
    • Lin, P.1    Guo, J.2    Wu, C.3
  • 10
    • 0006978668 scopus 로고    scopus 로고
    • Model for the above threshold characteristics and threshold voltage in polycrystallinesilicon transistors,"
    • vol. 68, p. 2463, 1990.
    • G. Fortunato and P. Migliorato, Model for the above threshold characteristics and threshold voltage in polycrystallinesilicon transistors," J. Appl. Phys., vol. 68, p. 2463, 1990.
    • J. Appl. Phys.
    • Fortunato, G.1    Migliorato, P.2
  • 11
    • 0000810980 scopus 로고    scopus 로고
    • A closed form inversion type polysilicon thinfilm transistor DC/AC model considering the kink effect,"
    • vol. 77, p. 1776, 1995.
    • S. Chen, F. Shone, and J. Kuo, A closed form inversion type polysilicon thinfilm transistor DC/AC model considering the kink effect," J. Appl. Phys., vol. 77, p. 1776, 1995.
    • J. Appl. Phys.
    • Chen, S.1    Shone, F.2    Kuo, J.3
  • 12
    • 0029346006 scopus 로고    scopus 로고
    • An analytical model for the above threshold characteristics of polysilicon thinfilm transistors,"
    • vol. 42, p. 1240, 1995.
    • H. Chern, C. Lee, and T. Lei, An analytical model for the above threshold characteristics of polysilicon thinfilm transistors," IEEE Trans. Electron Devices, vol. 42, p. 1240, 1995.
    • IEEE Trans. Electron Devices
    • Chern, H.1    Lee, C.2    Lei, T.3
  • 13
    • 0029517869 scopus 로고    scopus 로고
    • A physical based analytical turnon model of polysilicon thinfilm transistors for circuit simulation," in
    • 1995, p. 953.
    • G. Yang, S. Hur, C. Kim, and C. Han, A physical based analytical turnon model of polysilicon thinfilm transistors for circuit simulation," in IEDM Tech. Dig., 1995, p. 953.
    • IEDM Tech. Dig.
    • Yang, G.1    Hur, S.2    Kim, C.3    Han, C.4
  • 14
    • 0028375099 scopus 로고    scopus 로고
    • Design and operation of polySi analogue circuits," in
    • 1994, vol. 141, p. 60.
    • C. Reita and S. Fluxman, Design and operation of polySi analogue circuits," in IEE Proc. Circuits Dev. Syst., 1994, vol. 141, p. 60.
    • IEE Proc. Circuits Dev. Syst.
    • Reita, C.1    Fluxman, S.2
  • 15
    • 0026106357 scopus 로고    scopus 로고
    • A unified circuit model for the polysilicon thinfilm transistor,"
    • vol. 30, p. L170, 1991.
    • M. Izzard, P. Migliorato, and W. Milne, A unified circuit model for the polysilicon thinfilm transistor," Jpn. J. Appl. Phys., vol. 30, p. L170, 1991.
    • Jpn. J. Appl. Phys.
    • Izzard, M.1    Migliorato, P.2    Milne, W.3
  • 17
    • 0005686845 scopus 로고    scopus 로고
    • Subthreshold model of a polycrystalline silicon thinfilm fieldeffect transistor,"
    • vol. 50, p. 290, 1987.
    • B. Faughnan, Subthreshold model of a polycrystalline silicon thinfilm fieldeffect transistor," Appl. Phys. Lett., vol. 50, p. 290, 1987.
    • Appl. Phys. Lett.
    • Faughnan, B.1
  • 18
    • 0001306619 scopus 로고    scopus 로고
    • A new analytical model for amorphous silicon thinfilm transistors,"
    • vol. 66, p. 3371, 1989.
    • M. Shur, M. Hack, and J. Shaw, A new analytical model for amorphous silicon thinfilm transistors," J. Appl. Phys., vol. 66, p. 3371, 1989.
    • J. Appl. Phys.
    • Shur, M.1    Hack, M.2    Shaw, J.3
  • 19
    • 0029514465 scopus 로고    scopus 로고
    • "New model for the characterization and simulation of TFT's in all operating regimes," J
    • vol. 3. no. 3, p. 119, 1995.
    • H. Smet et al., "New model for the characterization and simulation of TFT's in all operating regimes," J. Soc. Inform. Display, vol. 3. no. 3, p. 119, 1995.
    • Soc. Inform. Display
    • Smet, H.1
  • 20
    • 33747165672 scopus 로고    scopus 로고
    • New analytical polysilicon thinfilm transistor model," in
    • 1991 ISDRS, p. 537.
    • Y. Byun, M. Shur, and M. Hack, New analytical polysilicon thinfilm transistor model," in Proc. 1991 ISDRS, p. 537.
    • Proc.
    • Byun, Y.1    Shur, M.2    Hack, M.3
  • 22
    • 0006496146 scopus 로고    scopus 로고
    • Circuit model and parameter extraction technique for polysilicon thinfilm transistors," in
    • 1993 ISDRS, p. 165.
    • M. Shur, M. Hack, and Y. Byun, Circuit model and parameter extraction technique for polysilicon thinfilm transistors," in Proc. 1993 ISDRS, p. 165.
    • Proc.
    • Shur, M.1    Hack, M.2    Byun, Y.3
  • 23
    • 0028374752 scopus 로고    scopus 로고
    • Temperature dependence of the anomalous leakage current in polysilicononinsulator MOSFET's,"
    • vol. 41, p. 221, 1994.
    • S. Bhattacharya, S. Banerjee, B. Nguyen, and P. Tobin, Temperature dependence of the anomalous leakage current in polysilicononinsulator MOSFET's," IEEE Trans. Electron Devices, vol. 41, p. 221, 1994.
    • IEEE Trans. Electron Devices
    • Bhattacharya, S.1    Banerjee, S.2    Nguyen, B.3    Tobin, P.4
  • 24
    • 0024627772 scopus 로고    scopus 로고
    • Effects of trap state density reduction by plasma hydrogenation in low temperature polysilicon TFT,"
    • vol. 10, p. 123, 1989.
    • I. Wu, A. Lewis, T. Huang, and A. Chiang, Effects of trap state density reduction by plasma hydrogenation in low temperature polysilicon TFT," IEEE Electron Device Lett., vol. 10, p. 123, 1989.
    • IEEE Electron Device Lett.
    • Wu, I.1    Lewis, A.2    Huang, T.3    Chiang, A.4
  • 25
    • 0025576796 scopus 로고    scopus 로고
    • Mechanism and device to device variation of leakage current in polysilicon thinfilm transistors," in
    • 1990, p. 867.
    • I. Wu, A. Lewis, and T. Huang, Mechanism and device to device variation of leakage current in polysilicon thinfilm transistors," in IEDM Tech. Dig., 1990, p. 867.
    • IEDM Tech. Dig.
    • Wu, I.1    Lewis, A.2    Huang, T.3
  • 26
    • 33747188445 scopus 로고    scopus 로고
    • Analysis and model of leakage current mechanism in polysilicon MOS thinfilm transistors," in
    • 1991 ISDRS, p. 525.
    • A. Adan, H. Tsutsui, and M. Horita, Analysis and model of leakage current mechanism in polysilicon MOS thinfilm transistors," in Proc. 1991 ISDRS, p. 525.
    • Proc.
    • Adan, A.1    Tsutsui, H.2    Horita, M.3
  • 27
    • 0030106203 scopus 로고    scopus 로고
    • The formation and annealing of hot carrier induced degradation in polySi TFT's, MOSFET's, and SOI devices, and similarities to state creation in αSi: H,"
    • vol. 43, p. 450, 1996.
    • N. Young, The formation and annealing of hot carrier induced degradation in polySi TFT's, MOSFET's, and SOI devices, and similarities to state creation in αSi: H," IEEE Trans. Electron Devices, vol. 43, p. 450, 1996.
    • IEEE Trans. Electron Devices
    • Young, N.1
  • 28
  • 29
    • 0029322855 scopus 로고    scopus 로고
    • Polycrystalline silicon thinfilm transistors,"
    • vol. 10, p. 721, 1995.
    • S. Brotherton, Polycrystalline silicon thinfilm transistors," Semicond. Sci. Technol., vol. 10, p. 721, 1995.
    • Semicond. Sci. Technol.
    • Brotherton, S.1
  • 30
    • 0021427789 scopus 로고    scopus 로고
    • "Physics of amorphous silicon based alloy fieldeffect transistors,"
    • vol. 55, p. 3831, 1984.
    • M. Shur and M. Hack "Physics of amorphous silicon based alloy fieldeffect transistors," J. Appl. Phys., vol. 55, p. 3831, 1984.
    • J. Appl. Phys.
    • Shur, M.1    Hack, M.2
  • 31
    • 33747291818 scopus 로고    scopus 로고
    • Threshold voltage, fieldeffect mobility, and gatetochannel capacitance in polysilicon TFT's,"
    • vol. 43, p. 1433, 1996.
    • M. Jacunski, M. Shur, and M. Hack, Threshold voltage, fieldeffect mobility, and gatetochannel capacitance in polysilicon TFT's," IEEE Trans. Electron Devices, vol. 43, p. 1433, 1996.
    • IEEE Trans. Electron Devices
    • Jacunski, M.1    Shur, M.2    Hack, M.3
  • 34
    • 0026151511 scopus 로고    scopus 로고
    • Avalanche induced effects in polysilicon thinfilm transistors,"
    • vol. 12, p. 203, 1991.
    • M. Hack and A. Lewis, Avalanche induced effects in polysilicon thinfilm transistors," IEEE Electron Device Lett., vol. 12, p. 203, 1991.
    • IEEE Electron Device Lett.
    • Hack, M.1    Lewis, A.2
  • 36
    • 0026173513 scopus 로고    scopus 로고
    • MOSFET substrate current model for circuit simulation,"
    • vol. 38, p. 1392, 1991.
    • N. Arora and M. Sharma, MOSFET substrate current model for circuit simulation," IEEE Trans. Electron Devices, vol. 38, p. 1392, 1991.
    • IEEE Trans. Electron Devices
    • Arora, N.1    Sharma, M.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.