An Analytical Model for the Above-Threshold Characteristics of Polysilicon Thin-Film Transistors

IEEE Transactions on Electron Devices

Volumn 42, Issue 7, 1995, Pages 1240-1246

  Chern, Horng Nan ^a   Lee, Chung Len ^a   Lei, Tan Fu ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHARGE CARRIERS; ELECTRON ENERGY LEVELS; GATES (TRANSISTOR); GRAIN BOUNDARIES; SEMICONDUCTOR DEVICE MODELS; THERMAL EFFECTS; TRANSCONDUCTANCE;

ABOVE THRESHOLD CHARACTERISTICS; BAND TAIL STATE; BARRIER POTENTIAL; CARRIER TRAPPING EFFECT; GATE BIAS; GATE VOLTAGE; POLYSILICON;

THIN FILM TRANSISTORS;

EID: 0029346006     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.391205     Document Type: Article

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