Temperature dependence of the anomalous leakage current in polysilicon-on-insulator MOSFET's

IEEE Transactions on Electron Devices

Volumn 41, Issue 2, 1994, Pages 221-227

  Bhattacharya, Suryanarayana S ^a   Banerjee, Sanjay K ^a   Nguyen, Bich Yen ^a   Tobin, Philip J ^a  

^a Rockwell International   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRON TUNNELING; GRAIN BOUNDARIES; LEAKAGE CURRENTS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SILICON ON INSULATOR TECHNOLOGY; THERMAL EFFECTS;

ANOMALOUS LEAKAGE CURRENTS; POLYCRYSTALLINE SILICON ON INSULATOR MOSFETS; TEMPERATURE DEPENDENCE;

MOSFET DEVICES;

EID: 0028374752     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.277375     Document Type: Article

References (13)

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