New model for the characterization and simulation of TFTs in all operating regions

Journal of the Society for Information Display

Volumn 3, Issue 3, 1995, Pages 119-125

  De Smet, Herbert ^a   De Baets, Johan ^a   De Cubber, Ann Marie ^a   De Vos, Joeri ^a   Van Calster, André ^a   Vanfleteren, Jan ^a  

^a GHENT UNIVERSITY   (Belgium)

Author keywords

MOSFETs; simulation; SPICE; thin film transistor LCDs

Indexed keywords

COMPUTER SIMULATION; CONVERGENCE OF NUMERICAL METHODS; ELECTRIC CONTACTS; ELECTRIC CURRENT MEASUREMENT; ELECTRIC RESISTANCE; MATHEMATICAL MODELS; MATRIX ALGEBRA; MOSFET DEVICES; THIN FILM TRANSISTORS;

DRAIN CONTACTS; SERIES RESISTANCE; SHICHMAN-HODGES STATE CURRENT EQUATION;

LIQUID CRYSTAL DISPLAYS;

EID: 0029514465     PISSN: 10710922     EISSN: 19383657     Source Type: Journal    
DOI: 10.1889/1.1984951     Document Type: Article

References (18)

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8. “New Analytical Poly‐Silicon Thin‐Film Transistor Model for CAD and Parameter Characterization,”
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