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Journal of Applied Physics

Volumn 68, Issue 5, 1990, Pages 2463-2467

Model for the above-threshold characteristics and threshold voltage in polycrystalline silicon transistors

(2) Fortunato, G a Migliorato, P b

a Via Cineto Romano 42 00156 (Italy)

b UNIVERSITY OF CAMBRIDGE (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0006978668 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.346507 Document Type: Article

Times cited : (53)

References (14)

1
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2
- 84919277241
- (1987) Proc. SID , vol.28 , pp. 109
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3
- 0023435001
- (1987) Appl. Surf. Sci. , vol.30 , pp. 353
- Migliorato, P.¹ Meakin, D.B.²

4
- 0008957105
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- Fortunato, G.¹ Migliorato, P.²

5
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- Werner, J.¹ Peisl, M.²

6
- 0018980803
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- Hirae, S.¹ Hirose, M.² Osaka, Y.³

7
- 0019928328
- (1982) Solid‐State Electron. , vol.25 , pp. 67
- de Graaf, H.C.¹ Huyber, M.² de Groot, J.G.³

8
- 0024106680
- (1988) Jpn. J. Appl. Phys. , vol.27 , pp. 2124
- Fortunato, G.¹ Meakin, D.B.² Migliorato, P.³

9
- 57849144818
- (Academic, New York)
- (1989) Encyclopedia of Physical Science and Technology, Yearbook 1990 , pp. 599
- Migliorato, P.¹

10
- 0020830319
- (1983) IEEE Trans. Electron Devices , vol.ED‐30 , pp. 1244
- Lim, H.K.¹ Fossum, J.G.²

11
- 0009732936
- (1986) IEEE Trans. Electron Devices , vol.ED‐33 , pp. 1563
- Ortiz‐Conde, A.¹ Fossum, J.G.²

12
- 84950897297
- Ref. 3, Eq. (13) was used as definition of [Formula Omitted] The better accuracy in numerical computations brought about by the use of Eq. (5) has led to the different definition given here.

13
- 0024015754
- (1988) Philos. Mag. B , vol.57 , pp. 573
- Fortunate, G.¹ Meakin, D.B.² Migliorato, P.³ LeComber, P.G.⁴

14
- 36549093818
- (1986) J. Appl. Phys. , vol.49 , pp. 2488
- Shur, M.¹ Hyun, G.² Hack, M.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.