Physical-based analytical turn-on model of polysilicon thin film transistors for circuit simulation

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1995, Pages 953-956

  Yang, Gi Young ^a   Hur, Sung Hoi ^a   Kim, Choong Ki ^a   Han, Chul Hi ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALGEBRA; CAPACITANCE; COMPUTER SIMULATION; ELECTRIC CURRENTS; GATES (TRANSISTOR); NETWORKS (CIRCUITS); SEMICONDUCTING SILICON COMPOUNDS; THERMAL EFFECTS; THIN FILM TRANSISTORS;

CIRCUIT SIMULATION; DRAIN INDUCED GRAIN BARRIER LOWERING; KINK EFFECT; PHYSICAL BASED ANALYTICAL TURN ON MODEL; SATURATION VOLTAGE;

SEMICONDUCTOR DEVICE MODELS;

EID: 0029517869     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)