A Quasi-Two-Dimensional Analytical Model For The Turn-On Characteristics Of Polysilicon Thin-Film Transistors

IEEE Transactions on Electron Devices

Volumn 37, Issue 3, 1990, Pages 666-674

  Lin, Pole Shang ^a   Guo, Jwin Yen ^a   Wu, Ching Yuan ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

MATHEMATICAL MODELS--APPLICATIONS;

BARRIER HEIGHT; CHANNEL DOPING; GRAIN BOUNDARIES; POLYSILICON THIN-FILM TRANSISTORS; QUASI-TWO-DIMENSIONAL ANALYTICAL MODEL; TURN-ON CHARACTERISTICS;

TRANSISTORS;

EID: 0025401960     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.47771     Document Type: Article

References (15)

1. S. D. S. Malhi et al., “Characteristics and three-dimensional integration of MOSFET's in small-grain LPCVD polycrystalline silicon,” IEEE Trans. Electron Devices, Vol. ED-32, pp. 258-281, 1985.
2. T. P. Brody, “The thin film transistor: A late flowering bloom,” IEEE Trans. Electron Devices, Vol. ED-31, pp. 1614-1628, 1984.
3. J.-P. Colinge, H. Morel, and J.-P. Chante, “Field effect in large grain polycrystalline silicon,” IEEE Trans. Electron Devices, Vol. ED-30, pp. 197-201, 1983.
4. S. W. Depp, A. Juliana, and B. G. Huth, “Polysilicon FET device for large area input/output application,” in IEDM Tech. Dig., 1980, pp. 703-706.
5. J. G. Fossum and A. Ortiz-Conde, “Effects of grain boundaries on the channel conductance of SOI MOSFET's,” IEEE Trans. Electron Devices, Vol. ED-30, pp. 933-940, 1983.
6. T. Senkawa, S. Shirai, A. Okamoto, and S. Suyama, “A model of current-voltage characteristics in polycrystalline silicon thin-film transistors,” IEEE Trans. Electron Devices, Vol. ED-34, pp. 321-324, 1987.
7. A. F. M. Anwar and A. N. Khondker, “A model for polysilicon MOSFET's,” IEEE Trans. Electron Devices, Vol. ED-34, pp. 1323-1329, 1987.
8. Y. A. El-Mansy and A. R. Boothroyd, “A simple two-dimensional model for IGFET operation in the saturation region,” IEEE Trans. Electron Devices, Vol. ED-24, pp. 254-262, 1977.
9. J. Y. W. Seto, “The electrical properties of polycrystalline silicon films,” J. Appl. Phys., Vol. 46, pp. 5247-5254, 1975.
10. C.-Y. Wu and W.-D. Ken, “A new computer-aided simulation model for polycrystalline silicon film resistors,” Solid-State Electron., Vol. 26, pp. 675-684, 1983.
11. D. M. Kim, A. N. Khondker, S. S. Ahmed, and r. r. Shah, “Drift-diffusion approach in crystalline-amorphous-crystalline semiconductor system-Part 1: Small signal theory,” IEEE Trans. Electron Devices, Vol. ED-31, pp. 480-493, 1984
12. C.-Y. Wu and Y.-W. Daih, “An accurate mobility model for the IV characteristics of n-channel enhancement-mode MOSFET's with single-channel boron implantation,” Solid-State Electron., Vol. 28, pp. 1271-1278, 1985.
13. M.S. Bazaraa and CM. Shetty, Nonlinear Programming: meory and Algorithms. New York: Wiley, 1979, pp. 279-289.
14. J. G. Fossum, A. Ortiz-Conde, H. Shichijo, and S. K. Banerjee, “Anomalous leakage current in LPCVD poly-silicion MOSFET's,” IEEE Trans. Electron Devices, Vol. ED-32, pp. 1878-1884, 1985.
15. T. I. Kamins, M. M. Mandurah, and K. C. Saraswat, “Structure and stability of low pressure chemically vapor-deposited silicon films,” J. Electrochem. Soc, Vol. 125, pp. 927-932, 1978.