Isotopic effect in deuterium-induced semiconductor surface metallization: D/3C-SiC(100) 3×2

Applied Physics Letters

Volumn 89, Issue 4, 2006, Pages

  Roy, J ^a   Aristov, V Yu ^a,c   Radtke, C ^a,d   Jaffrennou, P ^a   Enriquez, H ^a   Soukiassian, P ^a   Moras, P ^b   Spezzani, C ^b   Crotti, C ^b   Perfetti, P ^b  

^a DIF   (France)

^b CNR   (Italy)

^c RUSSIAN ACADEMY OF SCIENCES   (Russian Federation)

^d FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRANSFER; METALLIZING; SILICON CARBIDE; SURFACE TREATMENT; SYNCHROTRON RADIATION;

ASYMMETRIC ATTACK; ATOMIC DEUTERIUM (D) INTERACTION; ISOTOPIC EFFECT; SURFACE DANGLING BOND;

SEMICONDUCTOR MATERIALS;

EID: 33746645264     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2243801     Document Type: Article

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