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Physical Review Letters

Volumn 95, Issue 19, 2005, Pages

Physical origin of hydrogen-adsorption-induced metallization of the SiC surface: N-type doping via formation of hydrogen bridge bond

(5) Chang, Hao a Wu, Jian a Gu, Bing Lin a Liu, Feng b Duan, Wenhui a

a TSINGHUA UNIVERSITY (China)

b UNIVERSITY OF UTAH (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HYDROGEN BRIDGE BONDS; HYDROGEN-ADSORPTION-INDUCED METALLIZATIONS; N-TYPE DOPING; SURFACE CONDUCTION BANDS;

BAND STRUCTURE; DIMERS; GAS ADSORPTION; HYDROGEN; HYDROGEN BONDS; SEMICONDUCTOR DOPING;

METALLIZING;

EID: 28844457063 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.95.196803 Document Type: Article

Times cited : (31)

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