H-induced Si-rich 3C-SiC(100) 3×2 surface metallization

Materials Science Forum

Volumn 457-460, Issue I, 2004, Pages 399-402

  D'Angelo, M ^a   Enriquez, H ^a   Silly, M G ^a   Derycke, V ^a   Aristov, V Yu ^a   Soukiassian, P ^a   Ottavianni, C ^b,c   Pedio, M ^b,c   Perfetti, P ^b,c  

^a DIF   (France)

^b CNR   (Italy)

^c SINCROTRONE TRIESTE   (Italy)

Author keywords

Core Level and Valence Band Photoemission; Hydrogen; Metallization; Scanning Tunneling Microscopy and Spectroscopy; Surface; Synchrotron Radiation

Indexed keywords

HYDROGEN; METALLIZING; PASSIVATION; SCANNING TUNNELING MICROSCOPY; SURFACE CHEMISTRY; X RAY DIFFRACTION ANALYSIS;

BAND GAPS; CORE LEVEL AND VALENCE BAND PHOTOEMISSIONS; GRAZING INCIDENCE X-RAY DIFFRACTION (GIXRD); SEMICONDUCTOR SURFACES;

SILICON CARBIDE;

EID: 2442681973     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

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