Ab initio electronic and structural properties of clean and hydrogen saturated β-SiC(100)(3 × 2) surfaces

Journal of Physics Condensed Matter

Volumn 17, Issue 30, 2005, Pages 4739-4746

  Mota, Fernando B ^a   Von Nascimento, B ^a,b,c   De Castilho, Caio M C ^a  

^a UNIVERSITY OF CAMPINAS   (Brazil)

^b UNIVERSITY OF TENNESSEE   (United States)

^c OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; CRYSTAL ATOMIC STRUCTURE; ELECTRONIC STRUCTURE; HYDROGEN; MICROELECTRONICS; PASSIVATION; SATURATION (MATERIALS COMPOSITION); SURFACE STRUCTURE;

ATOMIC STRUCTURAL PROPERTIES; HYDROGEN ADSORPTION; METALLIC BEHAVIOR; SEMICONDUCTOR SURFACES;

SILICON CARBIDE;

EID: 22844446356     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/17/30/002     Document Type: Article

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