Hydrogen-induced metallization of a preoxidized 3C-SiC (100) 3×2 surface

Applied Physics Letters

Volumn 85, Issue 21, 2004, Pages 4893-4895

  Silly, M G ^a,b   Radtke, C ^a,b   Enriquez, H ^a,b   Soukiassian, P ^a,b   Gardonio, S ^b   Moras, P ^b   Perfetti, P ^b  

^a DIF   (France)

^b SINCROTRONE TRIESTE   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; FERMI LEVEL; HYDROGEN; METALLIZING; PASSIVATION; PEROXIDES; PHOTOEMISSION; SEMICONDUCTOR MATERIALS; SPECTROSCOPIC ANALYSIS; SYNCHROTRON RADIATION;

ATOMIC HYDROGEN INTERACTION; SEMICONDUCTOR SURFACES; SUBNANOMETRIC SCALE; VALENCE BAND;

SILICON CARBIDE;

EID: 19144367990     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1827938     Document Type: Article

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