Influence of orientation and oxygen content on electrical properties of In situ deposited PZT thin films

Ferroelectrics

Volumn 288, Issue , 2003, Pages 111-120

  Le Rhun, G ^a   Poullain, G ^a   Bouregba, R ^a   Vilquin, B ^a  

^a UNIVERSITÉ DE CAEN   (France)

Author keywords

Electrical properties; PZT orientation; PZT oxygen content; PZT thin film

Indexed keywords

CAPACITORS; COERCIVE FORCE; CRYSTALLOGRAPHY; ELECTRIC PROPERTIES; ELECTRODES; FERROELECTRICITY; PARTIAL PRESSURE; SILICA; SPUTTERING; SUBSTRATES;

ELECTRICAL PROPERTIES; PZT ORIENTATION; PZT OXYGEN CONTENT; PZT THIN FILM;

THIN FILM TRANSISTORS;

EID: 33746298398     PISSN: 00150193     EISSN: 15635112     Source Type: Conference Proceeding    
DOI: 10.1080/00150190390211954     Document Type: Conference Paper

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