Growth and characterization of Ge nanocrystals

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 147, Issue 1-4, 1999, Pages 367-372

  Guha, Soumyendu ^a   Wall, Mark ^b   Chase, Lloyd L ^b  

^a NAVAL RESEARCH LABORATORY   (United States)

^b LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

Author keywords

Ge nanocrystals; Raman spectroscopy; TEM; X ray

Indexed keywords

ANNEALING; CRYSTAL GROWTH; FILM GROWTH; ION IMPLANTATION; PARTICLE SIZE ANALYSIS; RAMAN SPECTROSCOPY; SEMICONDUCTING GERMANIUM; SILICA; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

SILICA FILM; THERMALLY GROWN FILM;

NANOSTRUCTURED MATERIALS;

EID: 0032714986     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00578-3     Document Type: Article

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