Performance of Carbon Nanotube Field Effect Transistors with doped source and drain extensions and arbitrary geometry

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 2005, Issue , 2005, Pages 522-525

  Fiori, G ^a   Iannaccone, G ^a   Klimeck, G ^b  

^a UNIVERSITY OF PISA   (Italy)

^b PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBES; COMPUTER SIMULATION; GATE DIELECTRICS; SILICON;

DOUBLE GATE DEVICES; HIGH-FREQUENCY PERFORMANCE; SHORT CHANNEL EFFECTS;

FIELD EFFECT TRANSISTORS;

EID: 33847733062     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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