SCOPUS 정보 검색 플랫폼

Volumn 86, Issue 12, 2005, Pages 1-3

Effect of template morphology on the efficiency of InGaNGaN quantum wells and light-emitting diodes grown by molecular-beam epitaxy

(5) Tang, H a Haffouz, S a Powell, A a Bardwell, J A a Webb, J a

a NATIONAL RESEARCH COUNCIL CANADA (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); GALLIUM NITRIDE; GRAIN BOUNDARIES; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; PLASMA APPLICATIONS; PYROLYSIS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SPECTRUM ANALYSIS; SUBSTRATES; SURFACE ROUGHNESS; X RAY DIFFRACTION ANALYSIS;

AMMONIA-MOLECULAR-BEAM EPITAXY; FACETED MORPHOLOGY; TEMPLATE MORPHOLOGY; THREADING DISLOCATIONS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 17944363004 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1884745 Document Type: Article

Times cited : (12)

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