Reliability studies of barrier layers for Cu/PAE low-k interconnects

Microelectronics Reliability

Volumn 46, Issue 8, 2006, Pages 1309-1314

  Nguyen, H S ^a   Gan, Z H ^a   Chen, Zhe ^b   Chandrasekar, V ^a   Prasad, K ^b   Mhaisalkar, S G ^a   Jiang, Ning ^c  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; DIELECTRIC MATERIALS; DIFFUSION; ELECTROMIGRATION; ELECTRONIC EQUIPMENT; ETHERS;

ELECTRICAL BREAKDOWN FIELDS; ELECTRICAL TESTING; ELECTROMIGRATION RESISTANCE;

INTERFACES (MATERIALS);

EID: 33746209042     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2005.11.005     Document Type: Article

References (16)

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