Stress-induced voiding in multi-level copper/low-k interconnects

IEEE International Reliability Physics Symposium Proceedings

Volumn 2004-January, Issue January, 2004, Pages 240-245

  Lim, Y K ^a,b   Lim, Y H ^a   Seet, C S ^a   Zhang, B C ^a   Chok, K L ^a   See, K H ^a   Lee, T J ^a   Hsia, L C ^a   Pey, K L ^b  

^a CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Cu; Diffusion barrier layer; Dual via interconnect; Low k; Multi level; Pull back; Re sputtering; Stress migration; Stress induced voiding

Indexed keywords

COMPRESSIVE STRESS; COPPER; DIFFUSION; DIFFUSION BARRIERS; METALLIZING; METALS;

DIFFUSION BARRIER LAYERS; MULTILEVELS; PULL BACK; RE-SPUTTERING; STRESS MIGRATION; STRESS-INDUCED VOIDING; VIA INTERCONNECT;

INTEGRATED CIRCUIT INTERCONNECTS;

EID: 78751560534     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2004.1315330     Document Type: Conference Paper

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