Role of excited nitrogen species in the growth of GaN by RF-MBE

Journal of Crystal Growth

Volumn 292, Issue 2, 2006, Pages 221-226

  Kikuchi, T ^a   Somintac, A S ^a   Ariyada, O ^b   Wada, M ^a   Ohachi, T ^a  

^a DOSHISHA UNIVERSITY   (Japan)

^b Arios Inc   (Japan)

Author keywords

A1. Optical emission spectroscopy; A3. Combinatorial growth; A3. Radio frequency molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

MOLECULAR BEAM EPITAXY; MOLECULES; NITRIDES; NITROGEN; PLASMA APPLICATIONS; RADIOFREQUENCY SPECTROSCOPY; SEMICONDUCTOR MATERIALS;

COMBINATORIAL GROWTH; OPTICAL EMISSION SPECTROSCOPY (OES); RADIO-FREQUENCY MOLECULAR BEAM EPITAXY; SEMICONDUCTING III-V MATERIALS;

GALLIUM NITRIDE;

EID: 33746138168     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.04.019     Document Type: Article

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