Hollow‐anode plasma source for molecular beam epitaxy of gallium nitride

Review of Scientific Instruments

Volumn 67, Issue 3, 1996, Pages 905-907

  Anders, A ^a   Newman, N ^a   Rubin, M ^a   Dickinson, M ^a   Jones, E ^a   Phatak, P ^a   Gassmann, A ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

ALUMINIUM OXIDES; CATHODOLUMINESCENCE; CRYSTAL STRUCTURE; FILMS; GALLIUM NITRIDES; GLOW DISCHARGES; MOLECULAR BEAM EPITAXY; NITROGEN; PHOTOLUMINESCENCE; PLASMA SHEATH; SILICON CARBIDES; SUBSTRATES; TEMPERATURE RANGE 0400 1000 K; TEMPERATURE RANGE 1000 4000 K

Indexed keywords

EID: 0001222537     PISSN: 00346748     EISSN: 10897623     Source Type: Journal    
DOI: 10.1063/1.1146834     Document Type: Conference Paper

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