Control of nitrogen flux for growth of cubic GaN on 3C-SiC/Si by RF-MBE

Journal of Crystal Growth

Volumn 275, Issue 1-2, 2005, Pages

  Ohachi, T ^a   Kikuchi, T ^a   Miyauchi, K ^a   Ito, Y ^a   Takagi, R ^a   Hogiri, M ^a   Fujita, K ^b   Ariyada, O ^c   Wada, M ^a  

^a DOSHISHA UNIVERSITY   (Japan)

^b Ion Eng Res Institute Corporation   (Japan)

^c ARIOS Inc   (Japan)

Author keywords

A1. Electron cyclotron resonance; A1. Magnetic field; A3. Molecular beam epitaxy; B1. Nitrides

Indexed keywords

CRYSTAL GROWTH; ELECTRON CYCLOTRON RESONANCE; GALLIUM NITRIDE; MAGNETIC FIELDS; MOLECULAR BEAM EPITAXY; NITRIDES; ORIFICES; SILICON; SILICON CARBIDE; ULTRAHIGH VACUUM;

CUBIC PHASE; NITROGEN RADICAL PRODUCTION; POLY-TYPE FORMATION; RADIO FREQUENCY (RF);

NITROGEN;

EID: 15844425040     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.11.140     Document Type: Conference Paper

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