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Journal of Physics Condensed Matter

Volumn 14, Issue 13, 2002, Pages 3383-3397

The growth and properties of GaN:As layers prepared by plasma-assisted molecular beam epitaxy

(6) Foxon, C T a Harrison, I a Novikov, S V a,b Winser, A J a Campion, R P a Li, T a

a UNIVERSITY OF NOTTINGHAM (United Kingdom)

b IOFFE INSTITUTE (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; DOPING (ADDITIVES); GALLIUM ALLOYS; INTERFACES (MATERIALS); LIGHT EMISSION; MOLECULAR BEAM EPITAXY; PHASE TRANSITIONS; PLASMA APPLICATIONS; SEMICONDUCTING FILMS; SEMICONDUCTOR GROWTH; THERMAL EFFECTS;

ALLOY FILMS; ARSENIC DOPING; BAND EDGE EMISSION; BLUE EMISSION; PLASMA ASSISTED MOLECULAR BEAM EPITAXY;

GALLIUM NITRIDE;

EID: 0037041127 PISSN: 09538984 EISSN: None Source Type: Journal
DOI: 10.1088/0953-8984/14/13/301 Document Type: Article

Times cited : (29)

References (36)

1
- 0027683521
- (1993) Japan. J. Appl. Phys. , vol.32 , pp. 4413
- Sakai, S.¹ Ueta, Y.² Terauchi, Y.³

2
- 0000835293
- (1995) Phys. Rev. B , vol.51 , pp. 10568
- Neugebauer, J.¹ Van De Walle, C.G.²

3
- 0001274757
- (1996) Phys. Rev. B , vol.54 , pp. 17568
- Bellaiche, L.¹ Wei, S.H.² Zunger, A.³

4
- 5944258911
- (1996) Phys. Rev. Lett. , vol.76 , pp. 664
- Wei, S.H.¹ Zunger, A.²

5
- 0000595281
- (1999) Phys. Rev. B , vol.59 , pp. 9943
- Mattila, T.¹ Zunger, A.²

6
- 0001030327
- (2000) Appl. Phys. Lett. , vol.76 , pp. 1009
- Van De Walle, C.G.¹ Neugebauer, J.²

7
- 0000971269
- (1998) Phys. Rev. B , vol.58 , pp. 1367
- Mattila, T.¹ Zunger, A.²

8
- 0017291752
- (1976) J. Appl. Phys. , vol.47 , pp. 5387
- Pankove, J.I.¹ Hutchby, J.A.²

9
- 0032663207
- (1999) Appl. Surf. Sci. , vol.142 , pp. 237
- Shimaoka, G.¹ Udagawa, T.²

10
- 0001468231
- (1998) Appl. Phys. Lett. , vol.72 , pp. 1990
- Li, X.¹ Kim, S.² Reuter, E.E.³ Bishop, S.G.⁴ Coleman, J.J.⁵

11
- 0033164813
- (1999) Semiconductors , vol.33 , pp. 728
- Tsatsul'nikov, A.F.¹ Ber, B.Y.² Kartashova, A.P.³ Kudryavtsev, Y.A.⁴ Ledentsov, N.N.⁵ Lundin, V.V.⁶ Maksimov, M.V.⁷ Sakharov, A.V.⁸ Usikov, A.S.⁹ Alferov, Z.I.¹⁰

12
- 0034229162
- (2000) Semicond. Sci. Technol. , vol.15 , pp. 766
- Tsatsul'nikov, A.F.¹

13
- 0033746106
- (2000) J. Cryst. Growth , vol.212 , pp. 56
- Jin, S.R.¹ Ramsteiner, M.² Grahn, H.T.³ Ploog, K.H.⁴ Zhu, Z.Q.⁵ Shen, D.X.⁶ Li, A.Z.⁷ Metev, P.⁸ Guido, L.J.⁹

14
- 0001222818
- (1998) Appl. Phys. Lett. , vol.72 , pp. 2005
- Guido, L.J.¹ Mitev, P.² Gherasimova, M.³ Gaffey, B.⁴

15
- 85086527349
- (1999) MRS Internet J. Nitride Semicond. Res. , vol.4 S1
- Gherasimova, M.¹ Gaffey, B.² Mitev, P.³ Guido, L.J.⁴ Chang, K.L.⁵ Hsieh, K.C.⁶ Mitha, S.⁷ Spear, J.⁸

16
- 0000528915
- (1998) Appl. Phys. Lett. , vol.72 , pp. 3056
- Okumura, H.¹ Hamaguchi, H.² Feuillet, G.³ Ishida, Y.⁴ Yoshida, S.⁵

17
- 0001605884
- (1998) J. Appl. Phys. , vol.37 , pp. 1436
- Iwata, K.¹ Asahi, H.² Asami, K.³ Kuroiwa, R.⁴ Gonda, S.⁵

18
- 36448999784
- (1995) Appl. Phys. Lett. , vol.66 , pp. 1509
- Cheng, T.S.¹ Jenkins, L.C.² Hooper, S.E.³ Foxon, C.T.⁴ Orton, J.W.⁵ Lacklison, D.E.⁶

19
- 0033528956
- (1999) Mater. Sci. Eng. B , vol.59 , pp. 80
- Feuillet, G.¹ Hamaguchi, H.² Okumura, H.³ Yoshida, S.⁴

20
- 24544444474
- (2000) MRS Internet J. Nitride Semicond. Res. , vol.5 S1
- Yoshida, S.¹ Kimura, T.² Wu, J.³ Kikawa, J.⁴ Onabe, K.⁵ Shiraki, Y.⁶

21
- 0000460218
- (1997) Appl. Phys. Lett. , vol.70 , pp. 1025
- Feuillet, G.¹ Hamaguchi, H.² Ohta, K.³ Hacke, P.⁴ Okumura, H.⁵ Yoshida, S.⁶

22
- 0034140693
- (2000) J. Cryst. Growth , vol.209 , pp. 355
- Ramachandran, V.¹ Lee, C.D.² Feenstra, R.M.³ Smith, A.R.⁴ Northrup, J.E.⁵ Greve, D.W.⁶

23
- 0000330299
- (1997) MRS Internet J. Nitride Semicond. Res. , vol.2 , pp. 8
- Thordson, J.V.¹ Zsebok, O.² Sodervall, U.³ Andersson, T.G.⁴

24
- 0000001703
- (1998) J. Vac. Sci. Technol. B , vol.16 , pp. 1297
- Zhao, Y.¹ Deng, F.² Lau, S.S.³ Tu, C.W.⁴

25
- 0001310568
- (2000) Appl. Phys. Lett. , vol.77 , pp. 2506
- Winser, A.J.¹ Novikov, S.V.² Davis, C.S.³ Cheng, T.S.⁴ Foxon, C.T.⁵ Harrison, I.⁶

26
- 0034325366
- (2000) J. Cryst. Growth , vol.219 , pp. 327
- Foxon, C.T.¹ Novikov, S.V.² Cheng, T.S.³ Davis, C.S.⁴ Campion, R.P.⁵ Winser, A.J.⁶ Harrison, I.⁷

27
- 0034817880
- (2001) Semicond. Sci. Technol. , vol.16 , pp. 103
- Novikov, S.V.¹ Winser, A.J.² Harrison, I.³ Davis, C.S.⁴ Foxon, C.T.⁵

28
- 0035796726
- (2001) Appl. Phys. Lett. , vol.79 , pp. 69
- Gil, B.¹ Morel, A.² Taliercio, T.³ Lefebvre, P.⁴ Foxon, C.T.⁵ Harrison, I.⁶ Winser, A.J.⁷ Novikov, S.V.⁸

29
- 0035399206
- (2001) J. Cryst. Growth , vol.227-228 , pp. 486
- Foxon, C.T.¹ Novikov, S.V.² Campion, R.P.³ Davis, C.S.⁴ Cheng, T.S.⁵ Winser, A.J.⁶ Harrison, I.⁷

30
- 0035451510
- (2001) J. Cryst. Growth , vol.230 , pp. 527
- Winser, A.J.¹ Harrison, I.² Novikov, S.V.³ Davis, C.S.⁴ Campion, R.⁵ Cheng, T.S.⁶ Foxon, C.T.⁷

31
- 0002864028
- (1998) Rep. Prog. Phys. , vol.61 , pp. 1
- Orton, J.W.¹ Foxon, C.T.²

32
- 0003472812
- (New York: Dover); ch 13
- (1969) X-Ray Diffraction , pp. 253
- Warren, B.E.¹

33
- 0031123538
- (1997) J. Cryst. Growth , vol.173 , pp. 260
- Cho, S.H.¹ Hata, K.² Maruyama, T.³ Akimoto, K.⁴

34
- 0031700776
- (1998) J. Cryst. Growth , vol.183 , pp. 23
- Sanchez-Garcia, M.A.¹ Calleja, E.² Monroy, E.³ Sanchez, F.J.⁴ Calle, F.⁵ Munoz, E.⁶ Beresford, R.⁷

35
- 0011796924
- (2000) J. Appl. Phys. , vol.88 , pp. 1855
- Heying, B.¹ Averbeck, R.² Chen, L.F.³ Haus, E.⁴ Riechert, H.⁵ Speck, J.S.⁶

36
- 0000264104
- (2000) Appl. Phys. Lett. , vol.77 , pp. 2885
- Heying, B.¹ Smorchkova, I.² Poblenz, C.³ Elsass, C.⁴ Fini, P.⁵ Den Baars, S.⁶ Mishra, U.⁷ Speck, J.S.⁸

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