Effects of substrate temperature on electrical and structural properties of copper thin films

Microelectronics Journal

Volumn 37, Issue 9, 2006, Pages 930-937

  Chan, Kah Yoong ^a   Tou, Teck Yong ^a   Teo, Bee San ^a  

^a MULTIMEDIA UNIVERSITY   (Malaysia)

Author keywords

Copper; Electrical properties; Sputtering; Substrate temperature; Surface morphology

Indexed keywords

ATOMIC FORCE MICROSCOPY; COPPER; ELECTRIC PROPERTIES; GRAIN GROWTH; GRAIN SIZE AND SHAPE; MAGNETRON SPUTTERING; MICROSTRUCTURE; SILICON; SPUTTER DEPOSITION; SUBSTRATES; SURFACES;

COPPER THIN FILMS; FILM RESISTIVITY; STRUCTURAL PROPERTIES; SUBSTRATE TEMPERATURE;

THIN FILMS;

EID: 33745990533     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2006.01.011     Document Type: Article

References (38)

1. Benouattas N., Mosser A., Raiser D., Faerber J., and Bouabellou A. Appl. Surf. Sci. 153 (2000) 79
2. Vancea J., Hofmann F., and Hoffmann H. J. Phys.: Condens. Matter 1 (1989) 7419-7424
3. Jiang H., Klemmer T.J., and Barnard J.A. J. Vac. Sci. Technol. A 16 6 (1998) 3376-3383
4. Depla D., Haemers J., and Gryse R.D. Plasma Sources Sci. Technol. 11 (2002) 91-96
5. Ansari Z.A., Hong K.P., and Lee C.M. Mater. Sci. Eng. B 90 (2002) 103-109
6. Goswami J., Shivashankar S.A., and Anathakrishna G. Thin Solid Films 305 (1997) 52-60
7. Park Y.B., and Rhee S.W. J. Vac. Sci. Technol. B 15 6 (1997) 1995-2000
8. Teh W.H., Koh L.T., Chen S.M., Xie J., Li C.Y., and Foo P.D. Microelectron. J. 32 (2001) 579-585
9. Bai P., Yang G.R., You L., Lu T.M., and Knorr D.B. J. Mater. Res. 5 5 (1990) 989
10. Bai P., Yang G.R., and Lu T.M. Appl. Phys. Lett. 56 2 (1990) 198-200
11. Bai P., Yang G.R., and Lu T.M. J. Appl. Phys. 68 7 (1990) 3619-3624
12. Chan K.Y., and Teo B.S. J. Mater. Sci. 40 (2005) 5971-5981
13. Chan K.Y., and Teo B.S. J. Mater. Sci. 40 (2005) 5976
14. Chowdhury S., Laugier M.T., and Rahman I.Z. Thin Solid Films 447-448 (2004) 174
15. Jung Y.S., Lee D.W., and Jeon D.Y. Appl. Surf. Sci. 221 (2004) 136
16. Galdikas A. Thin Solid Films 418 (2002) 112
17. Sivakumar R., Jayachandran M., and Sanjeeviraja C. Mater. Chem. Phys. 87 (2004) 442
18. Sivakumar R., Jayachandran M., and Sanjeeviraja C. Mater. Chem. Phys. 87 (2004) 444
19. Knorr D.B., and Tracy D.P. Mater. Chem. Phys. 41 (1995) 207
20. Yoon S.G., Kim H.K., Kim M.J., Lee H.M., and Yoon D.H. Thin Solid Films 475 (2005) 241
21. Zhang D.M., Guan L., Li Z.H., Pan G.J., Sun H.Z., Tan X.Y., and Li L. Surf. Coatings Technol. 200 (2006) 4029
22. Patsalas P., Charitidis C., and Logothetidis S. Surf. Coatings Technol. 125 (2000) 337
23. Ghosh S., Singh F., Choudhary D., Avasthi D.K., Ganesan V., Shah P., and Gupta A. Surf. Coatings Technol. 142-144 (2001) 1036
24. Zhang P., Zheng X., Wu S., Liu J., and He D. Vacuum 72 (2004) 407
25. Dannenberg R., Stach E., Groza J.R., and Dresser B.J. Thin Solid Films 379 (2000) 133
26. Savaloni H., Taherizadeh A., and Zendehnam A. Physica B 349 (2004) 51
27. Zhao J.L., Li X.M., Bian J.M., Yu W.D., and Gao X.D. J. Crystal Growth 276 (2005) 509
28. Knuyt G., Quaeyhaegens C., D'Haen J., and Stals L.M. Thin Solid Films 258 (1995) 159
29. Wang Z.Y., Hu L.Z., Zhao J., Sun J., and Wang Z.J. Vacuum 78 (2005) 54
30. Shi J.R., Lau S.P., Sun Z., Shi X., Tay B.K., and Tan H.S. Surf. Coatings Technol. 138 (2001) 252
31. Shi J.R., Lau S.P., Sun Z., Shi X., Tay B.K., and Tan H.S. Surf. Coatings Technol. 138 (2001) 253
32. Shi J.R., Lau S.P., Sun Z., Shi X., Tay B.K., and Tan H.S. Surf. Coatings Technol. 138 (2001) 254
33. Harper J.M.E., Cabral Jr. C., Andricacos P.C., Gignac L., Noyan I.C., Rodbell K.P., and Hu C.K. J. Appl. Phys. 86 5 (1999) 2518
34. Harper J.M.E., Cabral Jr. C., Andricacos P.C., Gignac L., Noyan I.C., Rodbell K.P., and Hu C.K. J. Appl. Phys. 86 5 (1999) 2517
35. Lee H.W., Lau S.P., Wang Y.G., Tse K.Y., Hng H.H., and Tay B.K. J. Crystal Growth 268 (2004) 598
36. Chaabouni F., Abaab M., and Rezig B. Mater. Sci. Eng. B 109 (2004) 238
37. Cho N.I., Nam H.G., Choi Y., and Yang J.S. Microelectron. Eng. 66 (2003) 417
38. Cho N.I., Nam H.G., Choi Y., and Yang J.S. Microelectron. Eng. 66 (2003) 419