Transparent titanium dioxide thin film deposited by plasma-enhanced atomic layer deposition

Integrated Ferroelectrics

Volumn 81, Issue 1, 2006, Pages 239-248

  Liu, G X ^a   Shan, F K ^a   Lee, W J ^a   Lee, G H ^a   Kim, I S ^a   Shin, B C ^a   Yoon, S G ^b   Cho, C R ^c  

^a Dong Eui University   (South Korea)

^b Chungnam National University   (South Korea)

^c Korea Basic Science Institute (KBSI)   (South Korea)

Author keywords

Band gap; Dielectric constant; Leakage current density; Titanium dioxide; Transmittance

Indexed keywords

ANNEALING; CURRENT DENSITY; LEAKAGE CURRENTS; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; QUARTZ; RAPID THERMAL ANNEALING; SUBSTRATES; TITANIUM DIOXIDE;

BAND GAP; BANDGAP ENERGY; QUARTZ SUBSTRATES; TRANSMITTANCE;

THIN FILMS;

EID: 33745843699     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/10584580600660504     Document Type: Article

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