Very thin TiO 2 films Prepared by Plasma Enhanced Atomic Layer Deposition (PEALD)

Integrated Ferroelectrics

Volumn 68, Issue , 2004, Pages 129-137

  Park, Joong Jin ^a   Lee, Won Jae ^a   Lee, Geun Hyoung ^a   Kim, Il Soo ^a   Shin, Byoung Chul ^a   Yoon, Soon Gil ^b  

^a Dong Eui University   (South Korea)

^b Chungnam National University   (South Korea)

Author keywords

Dielectric constant; Leakage current; PEALD; Plasma enhanced atomic layer deposition; TiO 2

Indexed keywords

ANNEALING TEMPERATURE; REACTANT SOURCES; THICKNESS PER CYCLE; TI(N(CH 3)2)4;

ANNEALING; CHEMISORPTION; LEAKAGE CURRENTS; PERMITTIVITY; THERMAL EFFECTS; TITANIUM OXIDES;

FERROELECTRIC THIN FILMS;

EID: 21744453672     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/10584580490895815     Document Type: Article

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