Effects of hydrogenation and annealing on the deep levels in GaN epilayers grown on sapphire substrates

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 39, Issue 1 A/B, 2000, Pages

  Kang, Tae Won ^a   Yuldashev, Shavkat U ^a,c   Kim, Duek Young ^a   Kim, Tae Whan ^b  

^a Dongguk University   (South Korea)

^b Kwangwoon University   (South Korea)

^c S YU YUNUSOV INSTITUTE OF THE CHEMISTRY OF PLANT SUBSTANCES   (Uzbekistan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ANALYSIS; ANNEALING; ELECTRON TRANSITIONS; ELECTRONIC DENSITY OF STATES; HETEROJUNCTIONS; HYDROGENATION; NITRIDES; PHOTOCONDUCTIVITY; PHOTOIONIZATION; SAPPHIRE; SEMICONDUCTING GALLIUM ARSENIDE; THERMAL EFFECTS;

DEEP LEVELS; GALLIUM NITRIDE;

SEMICONDUCTING FILMS;

EID: 0033878967     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.l25     Document Type: Article

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