Leaky spots in irradiated SiO2 gate oxides observed with C-AFM

2005 Spanish Conference on Electron Devices, Proceedings

Volumn 2005, Issue , 2005, Pages 53-56

  Porti, M ^a   Nafriaa M ^a   Aymerich, X ^a   Cester, A ^b,c   Paccagnella, A ^b,c   Cimino, S ^b  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b UNIVERSITY OF PADOVA   (Italy)

^c SEZIONE DI PADOVA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; GATES (TRANSISTOR); IRRADIATION; LEAKAGE CURRENTS; MOS DEVICES;

CONDUCTIVE ATOMIC FORCE MICROSCOPE (C-AFM); GATE OXIDES; LEAKY SPOTS; RADIATION INDUCED LEAKAGE CURRENT (RILC);

SILICA;

EID: 33745711915     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SCED.2005.1504304     Document Type: Conference Paper

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