Pattern noise in e-beam exposed sub-35nm contacts

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6153 II, Issue , 2006, Pages

  Poppe, Wojtek ^a   Liddle, Alexander ^b   Anderson, Erik ^b   Neureuther, Andrew ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT HOLES; PATTERN NOISE; RESIST THICKNESS;

DEGASSING; ELECTRON BEAM LITHOGRAPHY; IMAGE ANALYSIS; IMAGE PROCESSING; SCANNING ELECTRON MICROSCOPY; SURFACE PROPERTIES;

ELECTRON BEAMS;

EID: 33745618465     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.657055     Document Type: Conference Paper

References (13)

1. Jonathan Cobb, Frances Houle, and Gregg Gallatin, "The estimated impact of shot noise in Extreme Ultraviolet Lithography," SPIE 5037, 2003, pp. 393-405.
2. Medeiros DR, Petrillo KE, Breyta G, Wu-Song Huang, Moreau WM. "Sensitivity factors of CAR electron-beam resists." SPIE-.4690, 2002, pp.442-52.
3. Eder-Kapl S, Loeschner H, Zeininger M, Fallmann W, Kirch O, Patsis GP, Constantoudis V, Gogolides E. "Line edge roughness investigation on chemically amplified resist materials with masked helium ion beam lithography." Elsevier. Microelectronic Engineering, vol. 73-74, June 2004, pp.252-8. Netherlands.
4. Lei Yuan, Neureuther AR. "Investigation of shot noise induced line-edge roughness by continuous model based simulation [UV lithography]." SPIE, vol.5376, no.1, 2004, pp.312-21. USA.
5. Gallatin GM. "Continuum model of shot noise and line edge roughness." SPIE, vol.4404, 2001, pp.123-32. USA
6. Neureuther, A.R., Pease, R.F.W., Yuan, L., Baghbani Parizi, K., Esfandyarpour, H., Poppe, W.J., Liddle, J.A. and Anderson, E.H., "Shot Noise for Sequential Processes and the Role of Lateral Mixing." submitted to JVST. Technol. B.
7. Rau N, Stratton F, Fields C, Ogawa T, Neureuther A, Kubena R, Willson G. "Shot-noise and edge roughness effects in resists patterned at 10 nm exposure." AIP for American Vacuum Soc. Journal of Vacuum Science & Technology B, vol.16, no.6, Nov.-Dec. 1998, pp.3784-8. USA.
8. Dong-Il Park, Sun-Kyu Seo, Woo-Gun Jeong, Eui-Sang Park, Jong-Hwa Lee, Hyuk-Joo Kwon, Jin-Min Kim, Sung-Mo Jung, Sang-Soo Choi. "A study of post-exposure baking effect for CAR process in photomask fabrication." SPIE, vol.5130, no.1, 26 Aug. 2003, pp. 190-6. USA.
9. Medeiros DR, Aviram A, Guarnieri CR, Huang W-S, Kwong R, Magg CK, Mahorowala AP, Moreau WM, Petrillo KE, Angelopoulos M. "Recent progress in electron-beam resists for advanced mask-making." IBM Journal of Research & Development, vol.45, no.5, Sept. 2001, pp.639-50. Publisher: IBM, USA.
10. Irmscher M, Beyer D, Butschke J, Constantine C, Hoffmann T, Koepernik C, Krauss C, Leibold B, Letzkus F, Mueller D, Springer R, Voehringer P. "Comparative evaluation of e-beam sensitive chemically amplified resists for mask making." SPIE, vol.4754, 2002, pp. 176-87,USA.
11. Ocola LE, Li W-Y, Kasica RJ, Blakey MI, Orphanos PA, Waskiewicz WK, Novembre AE, Sato M. Monte Carlo study of high performance resists for SCALPEL nanolithography. Elsevier. Microelectronic Engineering, vol.53, no.1-4, June 2000, pp.433-6. Netherlands.
12. Lee KY, Huang WS. Evaluation and application of a very high performance chemically amplified resist for electron-beam lithography. Journal of Vacuum Science & Technology B, vol.11, no.6, Nov.-Dec. 1993, pp.2807-11. USA.
13. Liddle JA, Gallatin GM, Ocola LE. Resist requirements and limitations for nanoscale electron-beam patterning. Three-Dimensional Nanoengineered Assemblies. Symposium (Mater. Res. Soc. Symposium Proceedings Vol.739). Mater. Res. Soc. 2003, pp. 19-30. Warrendale, PA, USA.