Line edge roughness investigation on chemically amplified resist materials with masked helium ion beam lithography

Microelectronic Engineering

Volumn 73-74, Issue , 2004, Pages 252-258

  Eder Kapl, Stefan ^a   Loeschner, Hans ^a   Zeininger, Michalea ^a   Fallmann, Wolfgang ^b   Kirch, Oliver ^c   Patsis, George P ^d   Constantoudis, V ^d   Gogolides, Evangelos ^d  

^a IMS NANOFABRICATION AG   (Austria)

^b VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

^c INFINEON TECHNOLOGIES AG   (Germany)

^d INSTITUTE OF MICROELECTRONICS   (Greece)

Author keywords

Analysis of variance; Ion beam lithography; Line edge roughness; Scaling analysis; Shot noise

Indexed keywords

ALGORITHMS; COPOLYMERS; DIFFUSION; HELIUM; ION BEAM LITHOGRAPHY; SCANNING ELECTRON MICROSCOPY; SENSITIVITY ANALYSIS; SHOT NOISE;

LINE EDGE ROUGHNESS; MICROELECTRONIC FABRICATION; SCALING ANALYSIS;

MICROELECTRONICS;

EID: 17344382842     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(04)00107-8     Document Type: Conference Paper

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