A Study of Post Exposure Baking Effect for CAR Process in Photomask Fabrication

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5130, Issue , 2003, Pages 190-196

  Park, Dong Il ^a   Seo, Soon Kyu ^a   Jeong, Woo Gun ^a   Park, Eui Sang ^a   Lee, Jong Hwa ^a   Kwon, Hyuk Joo ^a   Kim, Jin Min ^a   Jung, Sung Mo ^a   Choi, Sang Soo ^a  

^a Photomask R and D Center   (South Korea)

Author keywords

50 kV; CAR; LER; PEB; PEC latitude

Indexed keywords

CATALYSIS; DATA STORAGE EQUIPMENT; ERROR ANALYSIS; LITHOGRAPHY; SURFACE ROUGHNESS;

50 KV; CHEMICALLY AMPLIFIED RESIST (CAR); LINE EDGE ROUGHNESS (LER); POST EXPOSURE BAKING (PEB); PROXIMITY EFFECT CORRECTION (PEC) LATITUDE;

MASKS;

EID: 1642514817     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.504187     Document Type: Conference Paper

References (5)

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4. J.Alexander Liddle, "Proximity Effect Correction in Projection Electron Beam Lithography (Scattering with Angular Limitation Projection Electron-Beam Lithography)", Japanese Journal of Applied Physics, Vol. 34, pp. 6672, 1995.
5. Hua-Yu Liu and Geraint Owen, "The Effect of Resist Contrast on Linewidth Error Induced by e-beam Proximity Exposure", Journal of Vacuum Science. B8 (6), pp. 1872, 1990.