InxGa1-xN/AlyGa1-yN violet light emitting diodes with reflective p-contacts for high single sided light extraction

Electronics Letters

Volumn 33, Issue 24, 1997, Pages 2066-2068

  Mensz, P M ^a   Kellawon, P ^a   Van Roijen, R ^a,c   Kozodoy, P ^b,d   Denbaars, S ^b,d  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c NXP SEMICONDUCTORS   (Netherlands)

^d University of California   (United States)

Author keywords

Gallium nitride; Light emitting diodes

Indexed keywords

EPITAXIAL GROWTH; LIGHT EMISSION; POINT CONTACTS; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES;

HIGH SINGLE SIDED LIGHT EXTRACTION;

LIGHT EMITTING DIODES;

EID: 0031273459     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19971379     Document Type: Article

References (6)

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