Characterizing and predicting spatial nonuniformity in the deep reactive ion etching of silicon

Journal of the Electrochemical Society

Volumn 153, Issue 8, 2006, Pages

  Taylor, Hayden K ^a   Sun, Hongwei ^b   Hill, Tyrone F ^a   Farahanchi, Ali ^a   Boning, Duane S ^a,c  

^a Massachusetts Institute of Technology Cambridge   (United States)

^b University of Massachusetts   (United States)

^c ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

ALGORITHMS; ASPECT RATIO; COMPUTER AIDED DESIGN; MICROELECTROMECHANICAL DEVICES; REACTIVE ION ETCHING;

DATA-FITTING ALGORITHMS; ETCH RATE; ROOT MEAN SQUARE VALUE; SPATIAL NONUNIFORMITY;

SILICON WAFERS;

EID: 33745496592     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2209570     Document Type: Article

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