Characterization and modeling of oxide chemical-mechanical polishing using planarization length and pattern density concepts

IEEE Transactions on Semiconductor Manufacturing

Volumn 15, Issue 2, 2002, Pages 232-244

  Ouma, D Okumu ^a,b   Boning, Duane S ^a,c   Chung, James E ^a,d   Easter, William G ^b,e   Saxena, Vivek ^a,b,f   Misra, Sudhanshu ^a,b   Crevasse, Annette ^b  

^a IEEE   (United States)

^b AGERE SYSTEMS   (United States)

^c MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^d HEWLETT PACKARD COMPANY   (United States)

^e Semplastics   (United States)

^f Narad Networks   (United States)

Author keywords

Chemical mechanical polishing; Chip; CMP; Dielectric; Fast Fourier transform (FFT); Layout; Oxide; Planarization length; Topography; Yield

Indexed keywords

DIELECTRIC PLANARIZATION METHODS;

COMPUTATIONAL METHODS; DEFORMATION; ERROR ANALYSIS; FAST FOURIER TRANSFORMS; INTEGRATED CIRCUIT LAYOUT; MASKS; PARAMETER ESTIMATION; PRESSURE EFFECTS; SEMICONDUCTOR DEVICE STRUCTURES; SURFACE TOPOGRAPHY; THICKNESS MEASUREMENT;

CHEMICAL MECHANICAL POLISHING;

EID: 0036565356     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/66.999598     Document Type: Conference Paper

References (30)

1. Modeling of chemical-mechanical polishing: A review
2. Modeling and simulation
3. Wear-contact problems and modeling of chemical mechanical polishing
4. Modeling of chemical mechanical polishing process for three-dimensional simulation
5. Implementing large area 3D pattern erosion simulation
6. An analytical model of multiple ILD thickness variation induced by interaction of layout pattern and CMP process
7. A closed-form analytic model for ILD thickness variation in CMP processes
8. A method for die-scale simulation for CMP planarization
9. A novel optimization method of chemical mechanical polishing (CMP)
10. Rapid characterization and modeling of pattern dependent variation in chemical mechanical polishing
11. An integrated characterization and modeling methodology for CMP dielectric plananzation
12. The theory and design of plate glass polishing machines
13. A CMP model combining density and time dependencies
14. Modeling step height reduction and local removal rates based on pad-substrate interactions
15. Chemical processes in glass polishing
16. Glass polishing
17. Spatial variation in semiconductor processes: Modeling for control
18. A two-dimensional low pass filter model for die-level topography variation resulting from chemical mechanical polishing of ILD films
19. Multiple region contact sohitions for a flat indenter on a layered half space: Plain-strain case
20. Some axisymmetric problems for layered elastic media: Part I - Multiple region contact solutions for simply-connected indenters
21. The origin of edge effect in chemical mechanical planarization
22. Effect of fine-line density and pitch on interconnect ILD thickness variation in oxide CMP processes
23. Planarization and integration of shallow trench isolation
24. Wafer scale variation of planarization length in chemical mechanical polishing
25. Modeling of pattern-dependent on-chip interconnect geometry variation for deep-submicron process and design technology
26. The physical and electrical effects of metal fill pattern practices for oxide chemical mechanical polishing processes
27. Device independent process control of chemical-mechanical polishing
28. A simulation methodology for assessing the impact of spatial/pattern dependent interconnect parameter variation on circuit performance