Geometrical pattern effect on silicon deep etching by an inductively coupled plasma system

Journal of Micromechanics and Microengineering

Volumn 14, Issue 4, 2004, Pages 656-662

  Chung, Chen Kuei ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATIONAL GEOMETRY; DEFECTS; DENSITY (OPTICAL); INDUCTIVELY COUPLED PLASMA; PRESSURE CONTROL; PROTECTIVE COATINGS; SENSITIVITY ANALYSIS; SILICON COMPOUNDS; TRENCHING;

AUTO PRESSURE CONTROL; DOUGHNUTS; RADICAL DENSITY;

REACTIVE ION ETCHING;

EID: 2342464265     PISSN: 09601317     EISSN: None     Source Type: Journal    
DOI: 10.1088/0960-1317/14/4/029     Document Type: Article

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