Effects of source/drain activation on channel-length for excimer-laser-crystallized poly-Si thin-film transistors

Electrochemical and Solid-State Letters

Volumn 9, Issue 2, 2006, Pages

  Fan, Ching Lin ^a   Yang, Tsung Hsien ^a  

^a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS; EXCIMER LASERS; SEMICONDUCTOR JUNCTIONS; SILICON;

CHANNEL-LENGTH; FURNACE ACTIVATION; SOURCE/DRAIN ACTIVATION;

THIN FILM TRANSISTORS;

EID: 33645529548     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2150167     Document Type: Article

References (21)

1. H. Oshima and S. Morozumi, Tech. Dig. - Int. Electron Devices Meet. 1989, 157.
2. J. Ohwada, Digest of Society of Information Display 1986, 55.
3. M. K. Hatalis and D. W. Greve, IEEE Electron Device Lett., 8, 361 (1987).
4. R. Carluccio, J. Stoemenos, G. Fortunato, D. B. Meakin, and M. Bianconi, Appl. Phys. Lett., 66, 1394 (1995).
5. M. Miyasaka and J. Stoemenos, J. Appl. Phys., 86, 5566 (1999).
6. M. K. Hatalis and D. W. Greve, J. Appl. Phys., 63, 2260 (1988).
7. K. Mourgues, F. Raoult, L. Pichon, T. Mohammed-Brahim, D. Briand, and O. Bonnaud, Mater. Res. Soc. Symp. Proc., 471, 155 (1997).
8. K. Pangal, J. C. Sturm, and S. Wagner, J. Appl. Phys., 85, 1900 (1999).
9. J. B. Boyce, P. Mei, R. T. Fulks, and J. Ho, Phys. Status Solidi A, 166, 729 (1998).
10. C. L. Fan and M. C. Chen, J. Electrochem. Soc., 149, H93 (2002).
11. F. W. Rohlfing, J. R. Ayres, S. D. Brotherton, C. A. Fisher, and D. J. McCulloch, in Conference Record of the 20th International Display Research Conference Society for Information Display, p. 119 (2000).
12. K. C. Park, W. J. Nam, S. H. Kang, and M. K. Han, Electrochem. Solid-State Lett., 7, G116 (2004).
13. K. Yoneda, S. Yuda, K. Suzuki, and T. Yamada, in XIII Conference of Ion Implant Technology 2000, p. 316 (2000).
14. S. Luan and G. W. Neudeck, J. Appl. Phys., 72, 766 (1992).
15. H. W. Zen, T. C. Chang, P. S. Shih, D. Z. Peng, P. Y. Kuo, T. Y. Huang, and C. Y. Chang, IEEE Electron Device Lett., 18, 509 (2003).
16. C. F. Yeh, S. S. Lin, T. Z. Yang, C. L. Chen, and Y. C. Yang, IEEE Trans. Electron Devices, 41, 173 (1994).
17. C. T. Angelis, C. A. Dimitriadis, I. Samaras, J. Brini, G. Kamarinos, V. K. Gueorguiev, and Tz. E. Ivanov, J. Appl. Phys., 82, 4095 (1997).
18. J. Levinson, G. Este, M. Rider, P. J. Scanlon, F. R. Shepherd, and W. D. Westwood, J. Appl. Phys., 53, 1193 (1982).
19. R. E. Proano, R. S. Misage, and D. G. Ast, IEEE Trans. Electron Devices, 36, 1915 (1989).
20. N. Yamauchi, J. Hajjar, and R. Reif, IEEE Trans. Electron Devices, 38, 55 (1991).
21. C. L. Fan and M. C. Chen, J. Electrochem. Soc., 149, G567 (2002).