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Volumn , Issue , 1994, Pages 505-508

Improved electrical characteristics of thin-film transistors fabricated on nitrogen-implanted polysilicon films

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC PROPERTIES; FABRICATION; GATES (TRANSISTOR); ION IMPLANTATION; MOSFET DEVICES; NITROGEN; PASSIVATION; PLASMA APPLICATIONS; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON;

EID: 0028749410     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (18)

References (12)
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.