Epitaxial crystallization during 600 °C furnace annealing of amorphous Si layer deposited by low-pressure chemical-vapor-deposition and irradiated with 1-MeV Xe ions

Journal of Applied Physics

Volumn 82, Issue 11, 1997, Pages 5446-5459

  Nakata, Jyoji ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 4143050425     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.365571     Document Type: Article

References (35)

1. J. Nakata, Phys. Rev. B 43, 14643 (1991).
2. K. A. Jackson, J. Mater. Res. 3, 1218 (1988).
3. F. Priolo and E. Rimini, Mater. Sci. Rep. 5, 319 (1990).
4. F. Priolo, C. Spinella, and E. Rimini, Phys. Rev. B 41, 5235 (1990).
5. J. S. Williams and R. G. Elliman, Phys. Rev. Lett. 51, 1069 (1983).
6. J. S. Williams, R. G. Elliman, W. L. Brown, and T. E. Seidel, Phys. Rev. Lett. 55, 1482 (1985).
7. M. Fortuna, M.-O. Ruault, H. Bernas, H. GU, and C. Colliex, in Beam-Solid Interactions, edited by M. Nastasi, L. R. Harriott, N. Herbots, and R. S. Averback (Materials Research Society, Boston, 1993), p. 547.
8. J. S. Custer, A. Battaglia, M. Saggio, and F. Priolo, Phys. Rev. Lett. 69, 780 (1992).
9. V. Heera, R. Kögler, W. Skorupa, and R. Grotzschel, Nucl. Instrum. Methods Phys. Res. B 80/81, 538 (1993).
10. N. Kobayashi, M. Hasegawa, and N. Hayashi, Nucl. Instrum. Methods Phys. Res. B 80/81, 790 (1993).
11. V. Heera, T. Henkel, R. Kögler, and W. Skorupa, Phys. Rev. B 52, 15 776 (1995).
12. J. Nakata, J. Appl. Phys. 79, 682 (1996).
13. V. Heera, J. Appl. Phys. 80, 4235 (1996).
14. J. Nakata, J. Appl. Phys. 80, 4237 (1996).
15. N. Kobayashi, M. Hasegawa, N. Hayashi, H. Katsumata, Y. Makita, H. Shibata, and S. Uekusa, Nucl. Instrum. Methods Phys. Res. B 100/101, 498 (1995).
16. N. Kobayashi, M. Hasegawa, N. Hayashi, H. Katsumata, Y. Makita, H. Shibata, and S. Uekusa, MRS Symposia Proceedings No. 396, Materials Research Society, Boston, 1996 (unpublished), p. 207.
17. Y. Ohmura, Y. Matsushita, and M. Kashiwagi, Jpn. J. Appl. Phys., Part 2 21, L152 (1982).
18. A. La Ferla, E. Rimini, and G. Ferla, Appl. Phys. Lett. 52, 712 (1988).
19. Y. Kunii, M. Tabe, and K. Kajiyama, Jpn. J. Appl. Phys., Part 1 21, 1431 (1982).
20. Y. Kunii and Y. Sakakibara, Jpn. J. Appl. Phys., Part 1 26, 1816 (1987).
21. J. A. Roth and C. L. Anderson, Appl. Phys. Lett. 31, 689 (1977).
22. M. von Allmen, S. S. Lau, J. W. Mayer, and W. F. Tseng, Appl. Phys. Lett. 35, 280 (1979).
23. L. S. Hung, S. S. Lau, M. von Allmen, J. W. Mayer, B. M. Ullich, J. E. Baker, P. Williams, and W. F. Tseng, Appl. Phys. Lett. 37, 909 (1980).
24. J. Nakata, M. Takahashi, and K. Kajiyama, Jpn. J. Appl. Phys. 20, 2211 (1981).
25. J. Nakata, J. Appl. Phys. 82, 5433 (1997).
26. L. Csepregi, E. F. Kennedy, T. J. Gallagher, J. W. Mayer. and T. W. Sigmon, J. Appl. Phys. 48, 4234 (1977).
27. J. Nakata, T. Shibata, Y. Nanishi, and M. Fujimoto, J. Appl. Phys. 76, 2078 (1994).
28. J. C. Bourgoin and J. W. Corbett, Rad. Effects 36, 157 (1978).
29. T. Yamaguchi and J. Nakata, J. Appl. Phys. 81, 2219 (1997).
30. T. Takahashi, Y. Arakawa, N. Nishioka, and T. Ikoma, Appl. Phys. Lett. 60, 68 (1992).
31. T. Wada and H. Hada, Phys. Rev. B 30, 3384 (1984).
32. T. Wada and Y. Maeda, Appl. Phys. Lett. 52, 60 (1988).
33. T. Wada, Appl. Phys. Lett. 52, 1056 (1988).
34. H. Akazawa, J. Takahashi, Y. Utsumi, I. Kawashima, and T. Urisu, Appl. Phys. Lett. 60, 974 (1992).
35. F. Sato, K. Goto, and J. Chikawa, Jpn. J. Appl. Phys., Part 2 30, L205 (1991).