Charge pumping profiling technique for the evaluation of plasma-charging-enhanced hot-carrier effect in short-n-channel metal-oxide-semiconductor field-effect transistors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 7 A, 2002, Pages 4493-4499

  Chen, Shang Jr ^a   Chung, Steve Shao Shiun ^b   Lin, Horng Chih ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

Antenna effect; Charge pumping profiling technique; Device reliability; Interface trap generation; Plasma edge damage; Plasma etching; Plasma charging enhanced hot carrier effect; Three phase plasma damage mechanism

Indexed keywords

ELECTRIC CURRENTS; HOT CARRIERS; PLASMA ETCHING; POLYSILICON; SEMICONDUCTOR DEVICE MANUFACTURE;

CHARGE PUMPING PROFILING TECHNIQUE; INTERFACE TRAP GENERATION; PLASMA CHARGING ENHANCED HOT-CARRIER EFFECT; THREE-PHASE PLASMA DAMAGE MECHANISMS;

MOSFET DEVICES;

EID: 0036655532     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.4493     Document Type: Article

References (14)