Model for the amorphous roughening transition in amorphous semiconductor deposition

Journal of Non-Crystalline Solids

Volumn 352, Issue 9-20 SPEC. ISS., 2006, Pages 950-954

  Podraza, N J ^a   Wronski, C R ^b   Collins, R W ^a  

^a UNIVERSITY OF TOLEDO   (United States)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

Ellipsometry; Plasma deposition; Silicon; Solar cells; Surfaces and interfaces

Indexed keywords

COALESCENCE; ELECTRONIC PROPERTIES; ELLIPSOMETRY; HYDROGENATION; PHASE DIAGRAMS; REAL TIME SYSTEMS; SEMICONDUCTOR MATERIALS; SURFACE ROUGHNESS;

ADSORBED PRECURSORS; OPTIMUM ELECTRONIC PROPERTIES; RADICALS;

AMORPHOUS MATERIALS;

EID: 33745435189     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2005.12.013     Document Type: Article

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