Real time analysis of magnetron-sputtered thin-film CdTe by multichannel spectroscopic ellipsometry

Materials Research Society Symposium Proceedings

Volumn 865, Issue , 2005, Pages 9-14

  Li, Jian ^a   Chen, Jie ^a   Zapien, J A ^b   Podraza, N J ^a   Chen, Chi ^a   Drayton, J ^a   Vasko, A ^a   Gupta, A ^a   Wang, S L ^a   Collins, R W ^a   Compaan, A D ^a  

^a UNIVERSITY OF TOLEDO   (United States)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

COALESCENCE; DEPOSITION; ELLIPSOMETRY; MAGNETRON SPUTTERING; MICROSTRUCTURE; REAL TIME SYSTEMS; SEMICONDUCTING CADMIUM TELLURIDE; SILICON WAFERS; CADMIUM TELLURIDE; FILM THICKNESS; MICROSTRUCTURAL EVOLUTION; NUCLEATION; SILICON; SPECTROSCOPIC ELLIPSOMETRY; SUBSTRATES; THIN FILMS;

PHOTOVOLTAIC APPLICATIONS; REAL TIME SPECTROSCOPIC ELLIPSOMETRY (RTES); CRYSTALLINE SI WAFERS; DEPOSITION CONDITIONS; LAYER-BY-LAYER GROWTH; MULTICHANNEL DETECTION; POLYCRYSTALLINE THIN FILM; REAL TIME SPECTROSCOPIC ELLIPSOMETRY; ROTATING-COMPENSATOR MODULATION;

THIN FILMS; DEPOSITION;

EID: 30544454382     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-865-f1.2     Document Type: Conference Paper

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