Resistivity measurements of self-assembled epitaxially grown erbium silicide nanowires

Journal of Physics D: Applied Physics

Volumn 39, Issue 13, 2006, Pages 2839-2842

  Li, Zhigang ^a   Long, Shibing ^a   Wang, Congshun ^a   Liu, Ming ^a   Wu, Wengang ^b   Hao, Yilong ^b   Zhao, Xinwei ^c  

^a INSTITUTE OF MICROELECTRONICS   (China)

^b PEKING UNIVERSITY   (China)

^c TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC CONDUCTIVITY; ELECTRODES; ERBIUM ALLOYS; LASER ABLATION; NANOSTRUCTURED MATERIALS; SEMICONDUCTOR QUANTUM WIRES; THIN FILMS;

ERBIUM SILICIDE NANOWIRES; POST-ANNEALING PROCESS; RESISTIVITY MEASUREMENTS; THEORETICAL PREDICTIONS;

EPITAXIAL GROWTH;

EID: 33745314244     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/39/13/031     Document Type: Article

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