Growth and characterisation of InAs/GaAs quantum dots grown by MOCVD

Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Volumn , Issue , 2005, Pages 1-4

  Sears, Kallista ^a   Wong Leung, Jenny ^a   Buda, Manuela ^a   Tan, H H ^a   Jagadish, C ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ECOLOGY; EPITAXIAL GROWTH; ION BEAM ASSISTED DEPOSITION; METALS; OPTICAL WAVEGUIDES; ORGANIC CHEMICALS; ORGANIC COMPOUNDS; QUANTUM ELECTRONICS;

CHARACTERISATION; CHEMICAL VAPOUR DEPOSITION; DEVICE-QUALITY; GROWTH PARAMETERS; INAS/GAAS; INAS/GAAS QUANTUM DOTS; LOW PRESSURE (LP); METAL ORGANIC (MO); MICROELECTRONIC MATERIALS; STRANSKI-KRASTANOW GROWTH MODES; V/III RATIO;

SEMICONDUCTOR QUANTUM DOTS;

EID: 46149087059     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/COMMAD.2004.1577477     Document Type: Conference Paper

References (11)

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