TEM observation of threading dislocations in InAs self-assembled quantum dot structure

Journal of Crystal Growth

Volumn 205, Issue 4, 1999, Pages 461-466

  Shiramine, Ken ichi ^a   Horisaki, Yasunobu ^a   Suzuki, Dai ^a   Itoh, Satoru ^a   Ebiko, Yoshiki ^a   Muto, Shunichi ^a   Nakata, Yoshiaki ^b   Yokoyama, Naoki ^b  

^a HOKKAIDO UNIVERSITY   (Japan)

^b FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; MONOLAYERS; MULTILAYERS; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS; TRANSMISSION ELECTRON MICROSCOPY; WETTING;

BURGER VECTORS; INDIUM ARSENIDE; QUANTUM DOT HOLEBURNING MEMORY; QUANTUM DOT LASER; SELF ASSEMBLED QUANTUM DOTS; STRANSKI-KRASTANOW MODE; THREADING DISLOCATIONS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0033330567     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00309-7     Document Type: Article

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