Influence of rapid thermal annealing on a 30 stack InAs/GaAs quantum dot infrared photodetector

Journal of Applied Physics

Volumn 94, Issue 8, 2003, Pages 5283-5289

  Stewart, K ^a   Buda, M ^a   Wong Leung, J ^a   Fu, L ^a   Jagadish, C ^a   Stiff Roberts, A ^b   Bhattacharya, P ^b  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; INTERDIFFUSION (SOLIDS); PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS;

QUANTUM DOT INFRARED PHOTODETECTORS (QDIP);

INFRARED DETECTORS;

EID: 0242272329     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1609634     Document Type: Article

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