InAs quantum dots grown on InGaAs buffer layers by metal-organic chemical vapor deposition

Journal of Crystal Growth

Volumn 281, Issue 2-4, 2005, Pages 290-296

  Sears, K ^a   Wong Leung, J ^a   Tan, H H ^a   Jagadish, C ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

A1. Characterization; A1. Defects; A1. Nanostructures; A3. Metal organic vapor phase epitaxy; B2. Semiconducting III V materials

Indexed keywords

CHARACTERIZATION; DEFECTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR MATERIALS; TRANSMISSION ELECTRON MICROSCOPY;

SELF ASSEMBLED QUANTUM DOTS; SEMICONDUCTING III-V MATERIALS; STRANSKI-KRASTANOW GROWTH MODE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 22144484886     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.04.043     Document Type: Article

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